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It thus minimizes the incubation delay during the switching and enables sub-nanosecond (sub-ns) switching with an assist magnetic field 15. In conventional SOT devices with perpendicular magnetic anisotropy (PMA) of the switchable free layer, the current-induced damping-like torque is orthogonal to the magnetization of the free layer. To overcome the above limitations, spin-orbit torque (SOT) switching has been proposed as an alternative to the STT scheme 3, 4, 12, 13, 14. Moreover, the single path for both reading and writing makes it challenging to attain reliable reading operations 6. This renders STT-MRAM unsuitable for ultrafast applications such as cache memories. Enforced fast switching of STT may be possible with a large current density ( J c) in the writing process, however, this causes endurance issues, as the large J c degrades the oxide barrier of the MTJs. Time-resolved studies have shown that the switching speed of STT is limited to a timescale of 1 to 100 ns because of the non-negligible incubation delay induced by the collinear magnetization alignment of the reference and free layer 9, 10, 11. However, STT encounters limitations in ultrafast magnetization switching, which is of great importance for the development of high-speed data storage and processing devices. STT-MRAM has become a competitive technology as a replacement of embedded flash, and is promising for automotive and in-memory applications 6, 7, 8. Spin transfer torques (STT) 1, 2, 5 are presently utilized for magnetic random access memory (MRAM) applications with the magnetization of the nanomagnet controlled by an electric current that passes through an oxide layer in magnetic tunnel junctions (MTJs). Similar content being viewed by othersĬurrent-induced magnetization switching in nanomagnets has recently gained increasing attention to meet the demand for compact, fast, and energy-efficient magnetic storage cells and devices 1, 2, 3, 4. Our results offer a field-free SOT solution for energy-efficient scalable MRAM applications. The in-plane component reduces the incubation time, while the out-of-plane component realizes field-free switching at a low current. In this trilayer, the bottom magnetic layer or its interface generates spin currents with polarizations in both in-plane and out-of-plane components. Here, we demonstrate field-free SOT switching at sub-ns timescales in a CoFeB/Ti/CoFeB ferromagnetic trilayer, which satisfies all three conditions.
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However, for practical, high-speed SOT devices, it must satisfy three conditions simultaneously, i.e., field-free switching at short current pulses, short incubation delay, and low switching current. A potential alternative to STT is spin-orbit torque (SOT). Conventional magnetic random access memory (MRAM) devices rely on spin-transfer torque (STT), this however limits MRAM applications because of the nanoseconds incubation delay and associated endurance issues. If you no longer want us to keep that data, you can ask us to remove it from our systems at any time by contacting Customer Services. However, remember that if you ask us to delete your data we will no longer be able to provide you with an active license for our software.Current-induced spin torques enable the electrical control of the magnetization with low energy consumption. You can ask us to send you a copy of any personal data of yours that we have. Unless you tell us to remove your data, INSYDIUM LTD will keep your details stored on our system for as long as we think it might help in answering your current or any future enquiries. If you contact us again in the future we may refer back to your data to help us answer your questions. It will be used to purely to email you with offers or a newsletter. Your data will be stored on our secure internal system. We don’t share your data with any other third parties. Will the data be shared with any third parties?īy subscribing to our newsletter, you are giving your consent for us to save your data on MAILCHIMP to send you the emails you have asked for. We need to store your data so that we can send you news and product offer related information. What is the legal basis for processing the data? Our website also gives us your IP address. We ask you to submit your full name and email address. When you subscribe to our newsletter on our website, you are sending your personal data to INSYDIUM LTD - Registered in England Company registration no. It explains what we ask from you and what we do with the information you give us.
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